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由于主電極的構(gòu)造是對(duì)稱的(都從N層引出)，所以它的電極不像單向可控硅那樣分別叫陽(yáng)極和陰極，而是把與控制極相近的叫做電極A1，另一個(gè)叫做電極A2。雙向可控硅的主要缺點(diǎn)是承受電壓上升率的能力較低，這是因?yàn)殡p向可控硅在一個(gè)方向?qū)ńY(jié)束時(shí)，硅片在各層中的載流子還沒(méi)有回到截止?fàn)顟B(tài)的位置，必須采取相應(yīng)的保護(hù)措施。雙向可控硅元件主要用于交流控制電路，如溫度控制、燈光控制、防爆交流開(kāi)關(guān)以及直流電機(jī)調(diào)速和換向等電路。可控硅在維持電流以上一直處于開(kāi)通狀態(tài)，關(guān)斷電流高，控制困難，關(guān)斷速度較慢。逆變環(huán)節(jié)中，在LCI(負(fù)載換相逆變器)中SCR具有優(yōu)異表現(xiàn)，可做到超大功率，電壓高、電流也大。二極管(Diode，不可控整流器件)和SCR(半可控)整流均不需要PMW即可滿足兩象限變頻器工作，PWM需要用IGBT(全控)等器件。
Due to the symmetrical structure of the main electrode (all led out from the N layer), its electrodes are not called anode and cathode respectively like unidirectional thyristors. Instead, the electrode that is close to the control electrode is called the first electrode A1, and the other is called the second electrode A2. The main disadvantage of bidirectional thyristor is its ability to withstand voltage rise rate is low. This is because when bidirectional thyristor completes conduction in one direction, the carriers in each layer of the silicon wafer have not yet returned to the cut-off position, and corresponding protective measures must be taken. Bidirectional thyristor components are mainly used in AC control circuits, such as temperature control, lighting control, explosion-proof AC switches, and DC motor speed regulation and commutation circuits. The thyristor is always in an open state above the maintenance current, with high turning off current, difficult control, and slow turning off speed. In the inverter stage, SCR has excellent performance in LCI (Load Commutated Inverter), which can achieve ultra-high power, high voltage, and high current. Diode (Uncontrollable Rectifier) and SCR (Semi Controllable) rectifiers do not require PMW to meet the operation of two quadrant inverters, while PWM requires devices such as IGBT (Fully Controlled).
